Light emitting device having wavelength converting layer

ABSTRACT

Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.13/984,154, filed on Aug. 7, 2013, now issued as U.S. Pat. No.9,112,121, which is the National Stage entry of InternationalApplication PCT/KR2012/000728, filed on Jan. 31, 2012, and claimspriority from and the benefit of Korean Patent Application Nos.10-2011-0011298, filed on Feb. 9, 2011, and 10-2011-0138520, filed onDec. 20, 2011, which are incorporated herein by reference for allpurposes as if fully set forth herein.

BACKGROUND

1. Field

The present invention relates to a light emitting device, and moreparticularly, to a light emitting device having a wavelength convertinglayer.

2. Discussion of the Background

Current light emitting diodes (LEDs) can be made to be light in weight,thin in thickness and small in size, and have advantages of energyreduction and long lifetime. Accordingly, the LEDs are used as backlightsources for various types of display devices including cellular phones,and the like. Since an LED package having an LED mounted therein canimplement white light having a high color rendering property, it isexpected that the LED package will be applied to general illuminationwhile substituting for white light sources such as fluorescent lamps.

Meanwhile, there are various methods of implementing white light usingLEDs. Among others, a method is generally used in which white light isimplemented by combining an InGaN LED that emits blue light of 430 to470 nm and a phosphor that can convert the blue light into light with along wavelength. For example, the white light may be implemented bycombining a blue LED and a yellow phosphor excited by the blue LED so asto emit yellow light or by combining a blue LED and green and redphosphors.

Conventionally, white LED packages have been formed by encapsulating anLED chip with a resin containing a phosphor at a package level. However,the phosphor is not uniformly distributed in the resin, and it isdifficult to form the resin with a uniform thickness.

Accordingly, studies have been conducted to develop a technique forproviding an individual LED chip having a wavelength converting layerwith a uniform thickness by forming a uniform phosphor layer at a waferlevel or a chip level. The LED chip having the wavelength convertinglayer with a uniform thickness is provided at the wafer level or thechip level, so that a process of forming the wavelength converting layercan be omitted at a package level. Further, since the wavelengthconverting layer with the uniform thickness is used, it is possible toprevent color variations which could be generated due to orientationangles.

However, in the technique as described above, the individual LED chiphas the wavelength converting layer, so that, when a plurality of LEDchips are required, for example, in a high-power LED package, each ofthe LED chips should be individually mounted and subjected to wirebonding at the package level. Therefore, there is a limitation insimplifying a packaging process. Further, since a plurality of LED chipsshould be mounted, the size of the package is increased, and it isdifficult to provide a light source which may be considered as a pointlight source.

SUMMARY

Accordingly, the present invention is conceived to solve theaforementioned problems. An object of the present invention is toprovide a light emitting device having a wavelength converting layer,which can simplify a mounting process and/or a wire bonding process of aplurality of chips, performed at a package level or a module level, anddecrease the size of a light source.

Another object of the present invention is to provide a light emittingdevice capable of preventing light converted in a wavelength convertinglayer from being again incident into the inside of an LED chip to beresultantly lost.

Still another object of the present invention is to provide a lightemitting device capable of reducing the damage of a wavelengthconverting layer by light.

According to an aspect of the present invention, there is provided alight emitting device having a wavelength converting layer, comprising:a plurality of semiconductor stacked structures electrically connectedto one another; a wavelength converting layer for covering the pluralityof semiconductor stacked structures; an electrode electrically connectedto at least one of the semiconductor stacked structures; and at leastone additional electrode positioned on the electrode and passing throughthe wavelength converting layer to be exposed to the outside. Since theplurality of semiconductor stacked structures are electrically connectedto one another, the additional electrode passing through the wavelengthconverting layer can be disposed only at a current input terminal and/ora current output terminal, so that it is possible to simplify a wirebonding process at a package level or a module level.

The plurality of semiconductor stacked structures may be electricallyconnected to one another by means of connectors. The wavelengthconverting layer may cover the connectors. For example, a singlewavelength converting layer may cover the plurality of semiconductorstacked structures. Since the single wavelength converting layer coversthe plurality of semiconductor stacked structures, the plurality ofsemiconductor stacked structures can be integrally mounted on a chipmounting member such as a package or a module.

The additional electrode may comprise a first additional electrodethrough which current is outputted from the light emitting device, and asecond additional electrode through which current is inputted to thelight emitting device. Further, the light emitting device may have aplurality of first additional electrodes and a plurality of secondadditional electrodes, or may have a single first additional electrodeand a single second additional electrode.

At least one of the plurality of semiconductor stacked structurescomprise a plurality of light emitting cells, and the plurality of lightemitting cells may be electrically connected to one another by wires.

In some embodiments, the wavelength converting layer may maintain aspatial relation between the plurality of semiconductor stackedstructures. That is, a support substrate for supporting the entire ofthe plurality of semiconductor stacked structures may not separatelyexist, and only the wavelength converting layer may combine theplurality of semiconductor stacked structure.

In other embodiments, the support substrate may maintain a spatialrelation between the plurality of semiconductor stacked structures. Thewavelength converting layer may cover the plurality of semiconductorstacked structures on the support substrate.

The plurality of semiconductor stacked structures may comprise a firstsemiconductor stacked structure for emitting light of a firstwavelength, and a second semiconductor stacked structure for emittinglight of a second wavelength longer than the first wavelength.

The light emitting device may comprise a plurality of LED chips. Here,the respective LED chips may comprise a substrate and the semiconductorstacked structures positioned on the substrate. The plurality of LEDchips may emit light of the same wavelength, but the present inventionis not limited thereto. The plurality of LED chips may comprise LEDchips for emitting light of different wavelengths, respectively.Further, at least one of the plurality of LED chips may have a pluralityof light emitting cells.

The connectors are not particularly limited, but may comprise bondingwires. The additional electrode may be formed using a ball bondingprocess of the wires. In this case, the bonding wires may be formedtogether with the additional electrode in the same process.

In some embodiments, the plurality of LED chips may be arranged on thesupport substrate so as to be supported by the support substrate. Thelight emitting device may further comprise a bonding pattern formed onthe support substrate. A wire may be bonded to the bonding pattern.Thus, the plurality of LED chips can be easily connected to one anotherusing the bonding wires with the help of the bonding pattern.

The light emitting device may further comprise a spacer layer interposedbetween the wavelength converting layer and the at least one of thesemiconductor stacked structures. The spacer layer is formed of aninsulating layer. The spacer layer may comprise a distributed Braggreflector (DBR), and may further comprise a stress relief layerinterposed between the DBR and the semiconductor stacked structure.

The spacer layer is interposed between the wavelength converting layerand the semiconductor stacked structure so that the wavelengthconverting layer is spaced apart from the semiconductor stackedstructure. The spacer layer prevents the yellowing of a phosphor in thewavelength converting layer, which might be caused by light emitted fromthe semiconductor stacked structure.

The DBR may be formed by alternately laminating insulating layers withdifferent refractive indices, e.g., SiO2/TiO2 or SiO2/Nb2O5. Byadjusting the optical thicknesses of the insulating layers withdifferent refractive indices, the DBR may be configured to transmitlight generated in an active layer and reflect light converted in thewavelength converting layer.

The stress relief layer relieves a stress which might be caused in theDBR, so that it is possible to prevent the DBR from being exfoliatedfrom a layer formed under the DBR, e.g., the semiconductor stackedstructure. The stress relief layer may be formed of spin-on-glass (SOG)or porous silicon oxide.

The additional electrode may have a width narrower than that of theelectrode. The width of the additional electrode may become narrower asthe additional electrode is further apart from the electrode.Accordingly, the additional electrode can be stably attached to theelectrode, and it is possible to ensure the reliability of a subsequentprocess of bonding wires.

According to another aspect of the present invention, there is provideda light emitting device comprising: a support substrate having first andsecond lead electrodes; a plurality of LED chips mounted on the supportsubstrate; and a single wavelength converting layer for covering theplurality of LED chips. Here, the first and second lead electrodes passthrough the support substrate to extend to a bottom of the supportsubstrate.

Accordingly, since the light emitting device is connected to an externalpower source using the first and second lead electrodes, the additionalelectrode can be omitted.

In some embodiments, the plurality of LED chips may comprise a first LEDchip for emitting light of a first wavelength, and a second LED chip foremitting light of a second wavelength longer than the first wavelength.

Although the plurality of LED chips may be connected to one another inseries between the first and second lead electrodes, the presentinvention is not limited thereto, and the plurality of LED chips may beconnected to one another in various manners. The plurality of LED chipsmay be electrically connected to one another by means of bonding wires.Alternatively, the LED chips are flip-bonded onto the support substrateso as to be electrically connected to one another.

According to still another aspect of the present invention, there areprovided a light emitting module and a lighting assembly. The lightemitting module may comprise the light emitting device as describedabove and a printed circuit board on which the light emitting device ismounted. The lighting assembly may comprise the light emitting module.

According to the present invention, since a plurality of semiconductorstacked structures are electrically connected to one another, anadditional electrode passing through a wavelength converting layer isdisposed only at a current input terminal and/or a current outputterminal, or lead electrodes passing through a support substrate isemployed, so that it is possible to simplify a wire bonding process at apackage level or a module level. Further, since the plurality ofsemiconductor stacked structures are covered using the single wavelengthconverting layer, the plurality of semiconductor stacked structures canbe integrally mounted on a chip mounting member such as a package or amodule. Further, a spacer layer is employed, so that it is possible toprevent a phosphor in the wavelength converting layer from being damagedby light emitted from the semiconductor stacked structure. Further, thespacer layer comprises a DBR, so that it is possible to prevent lightconverted in the wavelength converting layer from being again incidentinto the inside of the semiconductor stacked structure, therebyimproving light efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view illustrating a light emitting deviceaccording to an embodiment of the present invention.

FIG. 2 is a sectional view taken along line A-A of FIG. 1, illustratingthe light emitting device according to the embodiment of the presentinvention.

FIG. 3 is a sectional view illustrating a light emitting deviceaccording to another embodiment of the present invention.

FIG. 4 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 5 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 6 is a plan view illustrating the light emitting device of FIG. 5.

FIG. 7 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 8 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 9 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 10 is a schematic plan view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 11 is a sectional view illustrating the light emitting device ofFIG. 10.

FIG. 12 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 13 is a sectional view illustrating an LED package in which a lightemitting device of the present invention is mounted.

FIG. 14 is a sectional view illustrating an LED chip having a pluralityof light emitting cells according to the present invention.

FIG. 15 is a schematic plan view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

FIG. 16 is a sectional view taken along line A-A of FIG. 15.

FIG. 17 is a schematic sectional view illustrating a light emittingdevice according to still another embodiment of the present invention.

FIG. 18 is a schematic sectional view illustrating a light emittingmodule having a light emitting device mounted therein according to anembodiment of the present invention.

FIG. 19 is a schematic sectional view illustrating a light emittingmodule having a light emitting device mounted therein according toanother embodiment of the present invention.

FIG. 20 is a schematic sectional view illustrating a lighting assemblyhaving a light emitting module mounted therein according to anembodiment of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Hereinafter, preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings. Thefollowing embodiments are provided only for illustrative purposes sothat those skilled in the art can fully understand the spirit of thepresent invention. Therefore, the present invention is not limited tothe following embodiments but may be implemented in other forms. In thedrawings, the widths, lengths, thicknesses and the like of elements areexaggerated for convenience of illustration. Like reference numeralsindicate like elements throughout the specification and drawings.

FIG. 1 is a schematic plan view illustrating a light emitting deviceaccording to an embodiment of the present invention. FIG. 2 is asectional view taken along line A-A of FIG. 1, illustrating the lightemitting device according to the embodiment of the present invention.

Referring to FIGS. 1 and 2, the light emitting device includes asubstrate 21, a plurality of semiconductor stacked structures S1, S2, S3and S4, first electrodes 41, second electrodes 42, a first additionalelectrode 43, a second additional electrode 44, connectors 45 forelectrically connecting the plurality of semiconductor stackedstructures to one another, and a wavelength converting layer 50. Therespective semiconductor stacked structures S1, S2, S3 and S4 is formedof a plurality of GaN-based semiconductor stacked structures 30including a first conductive-type semiconductor layer 25, an activelayer 27 and a second conductive-type semiconductor layer 29. A bufferlayer 23 may be interposed between the first conductive-typesemiconductor layer 25 and the substrate 21, and a spacer layer 33 maybe interposed between the wavelength converting layer 50 and each of thesemiconductor stacked structures 30.

The substrate 21 is not particularly limited, and may be a substratecapable of growing nitride semiconductor layers thereon, e.g., asapphire substrate, a silicon carbide substrate, a spinel substrate, asilicon substrate, or the like. The substrate 21 may be relativelythicker than the semiconductor stacked structure.

The active layer 27 and the first and second conductive-typesemiconductor layers 25 and 29 may be formed of a III-N-based compoundsemiconductor, e.g., an (Al, Ga, In)N semiconductor. Each of the firstand second conductive-type semiconductor layers 25 and 29 may have asingle- or multi-layered structure. For example, the firstconductive-type semiconductor layer 25 and/or the second conductive-typesemiconductor layer 29 may comprise a contact layer and a clad layer,and may further comprise a superlattice layer. In addition, the activelayer 27 may have a single or multiple quantum well structure. Forexample, the first and second conductive-type semiconductor layers maybe n-type and p-type semiconductor layers, respectively, but the presentinvention is not limited thereto. That is, the first and secondconductive-type semiconductor layers may be p-type and n-typesemiconductor layers, respectively. The buffer layer 23 decreases thedefect density generated in the semiconductor layers 25, 27 and 29 byreducing the lattice mismatch between the substrate 21 and the firstconductive-type semiconductor layer 25.

Meanwhile, the first electrode 41 is electrically connected to the firstconductive-type semiconductor layer 25 by coming in contact with anexposed surface of the first conductive-type semiconductor layer 25. Thesecond electrode 42 may be positioned on a top of the secondconductive-type semiconductor layer 29 so as to be electricallyconnected to the second conductive-type semiconductor layer 29. Thefirst and second electrodes 41 and 42 may be formed on each of thesemiconductor stacked structures S1, S2, S3 and S4. The first and secondelectrodes 41 and 42 may comprise, for example, Ti, Cu, Ni, Al, Au orCr, and may be formed of two or more materials thereof. A transparentconductive layer 31 such as Ni/Au, ITO, IZO or ZnO may be formed on thesecond conductive-type semiconductor layer 29 for the purpose of currentdistribution, and the second electrode 42 may be connected to thetransparent conductive layer.

The first additional electrode 43 forms a current output terminal of thelight emitting device, and is positioned on the first electrode 41 ofthe semiconductor stacked structure S4. The second additional electrode44 forms a current input terminal of the light emitting device, and ispositioned on the second electrode 42 of the semiconductor stackedstructure S1. Since the first and second additional electrodes form thecurrent output terminal and the current input terminal, respectively,the light emitting device may have only the two additional electrodes.The first and second additional electrodes 43 and 44 may have widthsnarrower than those of the first and second electrodes 41 and 42,respectively. That is, the first and second additional electrodes areconfined to tops of the first and second electrodes, respectively. Thefirst and second additional electrodes 43 and 44 may have shapes inwhich the widths of the first and second additional electrodes becomenarrower as the first and second additional electrodes are further apartfrom the first and second electrodes 41 and 42, respectively.Accordingly, the shapes as described above may cause the first andsecond additional electrodes 43 and 44 to be stably attached andmaintained to the respective first and second electrodes 41 and 42,which may be advantageous in a subsequent process such as a wire bondingprocess.

The connectors 45 electrically connect the semiconductor stackedstructures S1, S2, S3 and S4 to one another. As shown in FIG. 1, thesemiconductor stacked structures may be connected in series by theconnectors 45. However, the present invention is not limited thereto,and the semiconductor stacked structures S1, S2, S3 and S4 may beelectrically connected in various manners including in series, inparallel, in series-parallel, in reverse parallel, and the like.

The connectors 45 may be particularly bonding wires, and may be formedtogether with the first and second additional electrodes 43 and 44 usinga wire bonding process. Since the semiconductor stacked structures S1,S2, S3 and S4 are arranged on the substrate 21 with a high degree ofprecision, the wire bonding process can be very precisely performed.

The single wavelength converting layer 50 may cover sides and tops ofthe plurality of semiconductor stacked structures 30. The wavelengthconverting layer 50 may also cover the connectors 45 such as bondingwires.

The single wavelength converting layer 50 may be formed of a phosphorcontained in epoxy or silicon, or may be formed only of a phosphor. Forexample, before a chip is partitioned at a wafer level, the wavelengthconverting layer 50 may be formed of resin, e.g., epoxy or silicon,containing a phosphor therein so to have a uniform thickness usingsqueezing. At this time, the resin covering the first and secondadditional electrodes 43 and 44 is removed using grinding or the like,so that top surfaces of the first and second additional electrodes 43and 44 can be exposed. Accordingly, the wavelength converting layer 50having a flat top surface can be formed, and the first and secondadditional electrodes 43 and 44 pass through the wavelength convertinglayer 50 to be exposed to the outside of the light emitting device.

Further, the wavelength converting layer 50 may have a refractive index,for example, within a range from 1.4 to 2.0, and powder made of TiO2,SiO2, Y2O3 or the like may be mixed in the wavelength converting layer50 so as to control the refractive index.

Although not particularly limited, the top surface of the firstadditional electrode 43 may be positioned at a height identical to thatof the second additional electrode 44. Therefore, when portions of thesecond conductive-type semiconductor layer 29 and the active layer 27are removed to expose the first conductive-type semiconductor layer 25,the first additional electrode 43 may be longer than the secondadditional electrode 44, as shown in FIG. 2.

The spacer layer 33 is interposed between each of the semiconductorstacked structures 30 and the wavelength converting layer 50 so that thewavelength converting layer 50 is spaced apart from the semiconductorstacked structure 30. The spacer layer 33 may cover tops of thesemiconductor stacked structure 30 and the transparent conductive layer31. The spacer layer 33 may be formed of, for example, transparentresin, silicon nitride or silicon oxide. As the wavelength convertinglayer 50 is spaced apart from the semiconductor stacked structure 30 bythe spacer layer 33, it is possible to prevent the yellowing of thewavelength converting layer 50.

According to this embodiment, the second additional electrode 44 of thesemiconductor stacked structure S1 forms a current input terminal sothat current can be inputted from the outside to the light emittingdevice through the current input terminal, and the first additionalelectrode 43 of the semiconductor stacked structure S4 forms a currentoutput terminal so that current can be outputted from the light emittingdevice to the outside through the current output terminal. Meanwhile,current is inputted/outputted to/from the semiconductor stackedstructures S2 and S3 by means of the connectors 45. Thus, thesemiconductor stacked structures S2 and S3 can be fully buried in thewavelength converting layer 50, so that additional electrodes need notbe added on the semiconductor stacked structures S2 and S3.

Similarly to the conventional method of fabricating an LED, the lightemitting device according to this embodiment may be fabricated using thesemiconductor stacked structures 30 formed on the substrate 21 with asize ranging from 2 to 6 inches, which is used as a growth substrate.The electrodes 41 and 42 are formed on the semiconductor stackedstructures, the additional electrodes 43 and 44 are formed on thesemiconductor stacked structures S1 and S4 specified for each selectedunit, and the connectors electrically connecting the semiconductorstacked structures to one another are formed. Then, the wavelengthconverting layer 50 is formed over the substrate 21 at the wafer level,and an upper portion of the wavelength converting layer 50 is removedthrough mechanical polishing such as grinding to expose the additionalelectrodes 43 and 44. Subsequently, the substrate 21 is partitioned foreach selected unit, thereby completing the light emitting device. Inaddition, the spacer layer 33 may be previously formed at the waferlevel before the wavelength converting layer 50 is formed.

According to this embodiment, the semiconductor stacked structures 30respectively corresponding to a plurality of chip regions may beintegrally mounted on a package, a module or the like. Since thesemiconductor stacked structures 30 are electrically connected to oneanother by the connectors 45, the number of bonding wires required in apackage process or a module process can be remarkably decreased, therebysimplifying a wire bonding process.

FIG. 3 is a sectional view illustrating a light emitting deviceaccording to another embodiment of the present invention.

Referring to FIG. 3, the light emitting device according to thisembodiment is almost similar to that described with reference to FIGS. 1and 2, but different in that the spacer layer 33 comprises a distributedBragg reflector (DBR) 33 b. The spacer layer 33 may further comprise astress relief layer 33 a interposed between the DBR 33 b and thesemiconductor stacked structure 30.

That is, the spacer layer 33 may comprise the DBR 33 b formed byalternately laminating insulating layers with different refractiveindices, e.g., SiO2/TiO2 or SiO2/Nb2O5. In this case, the opticalthicknesses of the insulating layers with the different refractiveindices are adjusted, so that the spacer layer 33 can transmit lightgenerated in the active layer 27 and reflect light incident from theoutside or converted in the wavelength converting layer 50. The DBR hasa reflection band in which light having a long-wavelength region in thevisible light region is reflected while short-wavelength visible lightor ultraviolet light generated in the active layer 27 is transmitted.

According to this embodiment, the spacer layer 33 comprises the DBR 33b, so that it is possible to prevent light converted in the wavelengthconverting layer 50 from being again incident into the semiconductorstacked structure 30.

Meanwhile, the stress relief layer 33 a may be formed of spin-on-glass(SOG) or porous silicon oxide. The stress relief layer 33 a prevents theexfoliation of the DBR 33 b by relieving a stress of the DBR 33 b.

When the DBR 33 b is formed by alternately laminating insulating layerswith different refractive indices, e.g., SiO2/TiO2 or SiO2/Nb2O5,relatively high-density layers are laminated, so that the stressgenerated in the DBR is increased. Accordingly, the DBR may be easilyexfoliated from the semiconductor stacked structure 30. Thus, the stressrelief layer 33 a is disposed under the DBR 33 b, so that it is possibleto prevent the exfoliation of the DBR 33 b.

FIG. 4 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

Although the semiconductor stacked structures 30 having a horizontalstructure have been exemplarily described in FIGS. 1 to 3, thesemiconductor stacked structures 30 in this embodiment have a verticalstructure as shown in FIG. 4. The light emitting device according tothis embodiment comprises a substrate 51, a plurality of semiconductorstacked structures 30 each having a first conductive-type semiconductorlayer 25, an active layer 27 and a second conductive-type semiconductorlayer 29, first electrodes 41, a first additional electrode 43 and awavelength converting layer 50. Further, the light emitting device maycomprise a spacer layer 33, and may also comprise second electrodes 42,a second additional electrode 44, reflective metal layers 55, barriermetal layers 57 and bonding metals 53.

The substrate 51 is distinguished from a growth substrate for growingthe semiconductor layers 25, 27 and 29 thereon, and is a secondarysubstrate attached to the previously grown compound semiconductor layers25, 27 and 29. The substrate 51 may be a conductive substrate, forexample, a metal substrate or a semiconductor substrate, but may be aninsulation substrate such as sapphire so that the plurality ofsemiconductor stacked structures 30 can be connected to one another inseries.

The plurality of semiconductor stacked structures 30 are positioned onthe substrate 51, and each semiconductor stacked structure 30 has thefirst conductive-type semiconductor layer 25, the active layer 27 andthe second conductive-type semiconductor layer 29. Here, like a generalvertical LED, the p-type compound semiconductor layer 29 in thesemiconductor stacked structure 30 is positioned closer to the substrate51 than the n-type compound semiconductor layer 25.

The first conductive-type semiconductor layer 25, the active layer 27and the second conductive-type semiconductor layer 29 are similar to thesemiconductor layers described with reference to FIG. 2, so that theirdetailed descriptions will be omitted. Meanwhile, the n-type compoundsemiconductor layer 25 having a relatively small resistance ispositioned at the opposite side of the substrate 51, so that a topsurface of the n-type compound semiconductor layer 25 may be formed tobe roughened.

The reflective metal layer 55 may be interposed between the substrate 51and each of the semiconductor stacked structures 30, and the barriermetal layer 57 may be interposed between the substrate 51 and thereflective metal layer 55 so as to surround the reflective metal layer55. Further, the substrate 51 may be bonded to the semiconductor stackedstructure 30 via the bonding metal 53. The reflective metal layer 55 andthe barrier metal layer 57 may serve as a second electrode electricallyconnected to the second conductive-type semiconductor layer 29. Inaddition, the second electrode 42 may be additionally formed on thebarrier metal layer 57.

The wavelength converting layer 50 covers tops of the plurality ofsemiconductor stacked structures 30 on the substrate 51. The wavelengthconverting layer 50 may cover sides and tops of the semiconductorstacked structures 30.

Meanwhile, the spacer layer 33 may be interposed between the wavelengthconverting layer 50 and the semiconductor stacked structure 30. Thespacer layer 33 may be formed of, for example, transparent resin,silicon nitride or silicon oxide, as described with reference to FIG. 2.Further, as described with reference to FIG. 3, the spacer layer 33 maycomprise a DBR 33 b, and may comprise a stress relief layer 33 a.

The first electrodes 41 are positioned on the respective semiconductorstacked structures 30, e.g., the respective first conductive-typesemiconductor layers 25, so as to be electrically connected to therespective first conductive-type semiconductor layers 25, and the firstadditional electrode 43 is positioned on the first electrode 41. Thesecond additional electrode 44 may be positioned on the second electrode42. The additional electrodes 43 and 44 may have the same shapes andstructures as the first and second additional electrodes 43 and 44described with reference to FIG. 1. The first and second additionalelectrodes 43 and 44 are exposed to the outside of the light emittingdevice through the wavelength converting layer 50.

In this embodiment, the first and second additional electrodes 43 and44, as described with reference to FIGS. 1 and 2, may form a currentoutput terminal from the light emitting device and a current inputterminal to the light emitting device, respectively. The light emittingdevice according to this embodiment may comprise a plurality ofsemiconductor stacked structures S1, S2, S3 and S4 as shown in FIG. 1,and the adjacent semiconductor stacked structures 30 may be electricallyconnected to one another by means of connectors 45, e.g., bonding wires.

Meanwhile, although it has been illustrated and described in thisembodiment that the first and second electrodes 41 and 42 are connectedto the respective semiconductor stacked structures 30, the firstadditional electrode 43 is formed on the first electrode 41 of onesemiconductor stacked structure 30, and the second additional electrode44 is formed on the second electrode 42 of another semiconductor stackedstructure 30, the present invention is not limited thereto. For example,when the substrate 51 is a conductive substrate, the second electrode 42and the second additional electrode 44 may be omitted, and the substrate51 may form a current input terminal. In this case, one first additionalelectrode 43 may form a current output terminal from the light emittingdevice, and the semiconductor stacked structures 30 may be connected toone another by means of the connectors so as to be connected in parallelbetween the substrate and the first additional electrode 43.

FIG. 5 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention. FIG. 6is a plan view illustrating the light emitting device of FIG. 5.

Referring to FIGS. 5 and 6, although the plurality of semiconductorstacked structures 30 are arranged on the substrate 21 in the lightemitting device described with reference to FIGS. 1 and 2, the lightemitting device according to this embodiment is different from thatdescribed with reference to FIGS. 1 and 2 in that a plurality of LEDchips are arranged on a support substrate 71.

Each of the LED chips C1, C2, C3 and C4 may comprise a substrate 21, asemiconductor stacked structure 30, a first electrode 41 and a secondelectrode 42, and may comprise a spacer layer 33. That is, each of theLED chips of this embodiment is obtained by partitioning the lightemitting device of FIG. 2 with the wavelength converting layer 50removed into individual chips corresponding to the single semiconductorstacked structure 30.

As described with reference to FIG. 1, the first additional electrode 43is positioned on the first electrode 41 of the LED chip C4, and thesecond additional electrode 44 is positioned on the second electrode 42of the LED chip 43. The first additional electrode 43 forms a currentoutput terminal from the light emitting device, and the secondadditional electrode 44 forms a current input terminal to the lightemitting device.

Meanwhile, like the light emitting device of FIG. 1, the connectors mayelectrically connect to the LED chips C1, C2, C3 and C4 to one another.In addition, as shown in FIG. 6, the LED chips C2 and C3 may beelectrically connected to one another using a bonding pattern 73 on thesupport substrate 71. That is, a wire is bonded to the bonding pattern73, so that it is possible to decrease the length of the wire throughwhich the LED chips C2 and C3 are connected to each other.

The wavelength converting layer 50 covers the LED chips C1, C2, C3 andC4 on the support substrate 71. The wavelength converting layer 50 maycover sides of each substrate 21, and thus wavelength conversion canalso be performed on light emitted through the sides of the substrate21.

The light emitting device according to this embodiment may be fabricatedby mounting the individual LED chips C1, C2, C3 and C4 on the supportsubstrate 71, electrically connecting them to one another, forming thewavelength converting layer 50 and then partitioning the wavelengthconverting layer 50 together with the support substrate 71 for eachunit. Meanwhile, the first and second additional electrodes 43 and 44may be previously formed at the wafer level, but may be formed togetherwith the bonding wires on the support substrate 71.

FIG. 7 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

Referring to FIG. 7, the light emitting device according to thisembodiment is almost similar to that of FIG. 6, but different in thatthe support substrate 71 is removed. The support substrate 71 may beremoved after the wavelength converting layer 50 is formed as describedin FIG. 6. Then, the light emitting device may be completed bypartitioning the wavelength converting layer 50 for each unit.Accordingly, a bottom surface of the substrate 21 in each of the LEDchips may be exposed to the outside.

In the embodiment of FIG. 6, the support substrate 71 maintains aspatial relation of the LED chips C1, C2, C3 and C4. However, in thisembodiment, the wavelength converting layer 50 maintains a spatialrelation of the LED chips.

Meanwhile, in this embodiment, the support substrate 71 is removed, sothat the bonding pattern cannot also be used. Thus, the LED chips C1,C2, C3 and C4 are electrically connected to one another by means ofconnectors such as bonding wires.

FIG. 8 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

Referring to FIG. 8, the light emitting device according to thisembodiment is almost similar to that described with reference to FIG. 6,but different in that vertical LED chips are arranged on the supportsubstrate 71.

The LED chips may be, for example, obtained by partitioning the lightemitting device of FIG. 4 except the wavelength converting layer 50 intoindividual LED chips. The arrangement of the first and second electrodesand the first and second additional electrodes is similar to that in thelight emitting device of FIG. 4, and therefore, its detailed descriptionwill be omitted. However, as described with reference to FIG. 6, thebonding pattern 73 may be formed on the support substrate 71, and thebonding pattern 73 may be used so that the semiconductor stackedstructures 30 are electrically connected to one another.

The light emitting device may be completed by arranging the individualLED chips on the support substrate 71, electrically connecting theindividual LED chips to one another, forming the wavelength convertinglayer 50 and then partitioning the wavelength converting layer 50together with the support substrate 71 for each unit.

FIG. 9 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

Referring to FIG. 9, the light emitting device according to thisembodiment is almost similar to that of FIG. 8, but different in thatthe support substrate 71 is removed. The support substrate 71 may beremoved after the wavelength converting layer 50 is formed as describedin FIG. 8. Then, the light emitting device may be completed bypartitioning the wavelength converting layer 50 for each unit.Accordingly, a bottom surface of a substrate 51 in each of the LED chipsmay be exposed to the outside.

In the embodiment of FIG. 8, the support substrate 71 maintains aspatial relation of the LED chips C1, C2, C3 and C4. However, in thisembodiment, the wavelength converting layer 50 maintains a spatialrelation of the LED chips.

Meanwhile, in this embodiment, the support substrate 71 is removed, sothat the bonding pattern cannot also be used. Thus, the LED chips C1,C2, C3 and C4 are electrically connected to one another by means ofconnectors such as bonding wires.

FIG. 10 is a schematic plan view illustrating a light emitting deviceaccording to still another embodiment of the present invention. FIG. 11is a schematic sectional view illustrating the light emitting device ofFIG. 10. Although the light emitting device comprising the plurality ofGaN-based semiconductor stacked structures 30 has been described in theaforementioned embodiments, the light emitting device comprising an LEDchip B1 for emitting light of a first wavelength and LED chips R1 to R4for emitting light of a second wavelength will be described in thisembodiment.

Referring to FIGS. 10 and 11, the light emitting device according tothis embodiment comprises a support substrate 71, an LED chip B1 foremitting light of a first wavelength, and LED chips R1 to R4 foremitting light of a second wavelength. Bonding patterns 73 a and 73 bmay be formed on the support substrate 71.

The LED chip B1 may be formed of a GaN-based semiconductor as describedabove, and may be an LED chip as described with reference to FIG. 6 or8. Meanwhile, the LED chips R1 to R4 may be formed of an AlGaInP-basedsemiconductor. However, the present invention is not limited thereto,and the LED chips R1 to R4 may also be formed of another GaN-basedsemiconductor emitting light of a relatively long wavelength.

The LED chips B1 and R1 to R4 may be electrically connected to oneanother by means of connectors, e.g., bonding patterns 73 a and 73 b andbonding wires 45. First and second electrodes 41 and 42 may be providedto each of the LED chips. A first additional electrode 43 may bepositioned on the first electrode 41 of one LED chip R4 so as to form acurrent output terminal from the light emitting device, and a secondadditional electrode 44 may be formed on the second electrode 42 ofanother LED chip R1 so as to form a current input terminal to the lightemitting device.

Meanwhile, a wavelength converting layer 50 covers the LED chips B1 andR1 to R4, and the first and second additional electrodes 43 and 44 passthrough the wavelength converting layer 50 to be exposed to the outside.

According to this embodiment, warm white light can be implemented, forexample, by a combination of the LED chip B1 for emitting blue light,the LED chips R1 to R4 for emitting red light and the wavelengthconverting layer 50.

FIG. 12 is a sectional view illustrating a light emitting deviceaccording to still another embodiment of the present invention.

Referring to FIG. 12, the light emitting device according to thisembodiment is almost similar to that described with reference to FIG.11, but different in that the support substrate 71 is removed. Thus, aspatial relation of the LED chips B1 and R1 to R4 is maintained by thewavelength converting layer 50. Since the bonding pads 73 a and 73 bcannot also be used on the support substrate 71, the LED chips B1 and R1to R4 are electrically connected to one another by connectors such asbonding wires.

FIG. 13 is a sectional view illustrating an LED package in which a lightemitting device of the present invention is mounted. Although thepackage having the light emitting device of FIG. 12 mounted therein isdescribed in FIG. 13, the present invention is not limited thereto, andthe package may have various types of light emitting devices asdescribed above mounted therein.

Referring to FIG. 13, the LED package comprises a mount 91 for havingthe light emitting device mounted thereon. The LED package may alsocomprise bonding wires 95 and a lens 97.

The mount 91 may be, for example, a printed circuit board, a lead frame,a ceramic substrate, or the like, and may comprise lead terminals 93 aand 93 b. The first and second additional electrodes 43 and 44 of thelight emitting device as described in FIG. 12 are electrically connectedto the lead terminals 93 a and 93 b by means of the bonding wires 95,respectively.

Meanwhile, the lens 97 may cover the light emitting device. The lens 97allows an orientation angle of light emitted from the LED chips B1 andR1 to R4 to be controlled, so that the light may be emitted in a desireddirection. Since a wavelength converting layer 50 is formed in the lightemitting device, the lens 97 does not necessarily contain a phosphor.

Although the LED package having the light emitting device of FIG. 12mounted therein has been described in this embodiment, the presentinvention is not limited to the light emitting device of FIG. 12, andthe various types of light emitting devices as described above may bemounted in the LED package.

FIG. 14 is a sectional view illustrating an LED chip having a pluralityof light emitting cells, which may be applied to a light emitting deviceof the present invention.

Referring to FIG. 14, although it has been illustrated and described inthe aforementioned embodiments, e.g., in the embodiment of FIG. 6 thateach of the LED chips is formed of the single semiconductor stackedstructure 30, the present invention is not limited thereto, and an LEDchip having a plurality of light emitting cells may be used. That is, anLED chip having the semiconductor stacked structure 30 formed of aplurality of light emitting cells may also be applied to the presentinvention.

The plurality of light emitting cells are positioned on a substrate 21,and may be electrically connected to one another by wires 83. The wires83 may connect a first conductive-type semiconductor layer 25 of onelight emitting cell to a second conductive-type semiconductor layer 29of another light emitting cell adjacent to the one light emitting cellso as to form a serial array, and such serial arrays may be connected inparallel or reverse parallel.

An insulating layer 81 may be interposed between the light emitting celland the wire 83 so as to prevent the first and second conductive-typesemiconductor layers 25 and 29 of the light emitting cells from beingshort-circuited by the wire 83. A transparent conductive layer 31 ispositioned between the insulating layer 81 and each of the lightemitting cells. The transparent conductive layer 31 is ohmic-contactedwith the second conductive-type semiconductor layer 29.

The insulating layer 81 may cover the transparent conductive layer 31,and may further cover sides of the light emitting cell. A secondinsulating layer 85 may cover the light emitting cells and the wires 83so as to protect the light emitting cells and the wires 83.

Meanwhile, first and second electrodes 41 and 42 may be positioned onthe light emitting cells different from each other, respectively. Inthis embodiment, the positions on which the first and second electrodes41 and 42 are formed are not particularly limited. For example, all thefirst and second electrodes 41 and 42 may be formed on the substrate 21,or alternatively, formed on the first conductive-type semiconductorlayer 25 or the second conductive-type semiconductor layer 29. The firstand second electrodes 41 and 42 are exposed to the outside through theinsulating layers 81 and 85, and an additional electrode may be formedon one of the first and second electrodes 41 and 42.

Although it has been described in this embodiment that the individualLED chip has a plurality of light emitting cells, the present inventionis not limited thereto. For example, each of the semiconductor stackedstructures 30 in the embodiments of FIGS. 2 and 3 may comprise aplurality of light emitting cells. In the embodiments of FIGS. 10 to 13,the LED chip B1 may be an LED chip having a plurality of light emittingcells. In the embodiments of FIGS. 10 to 13, some LED chips each havinga single semiconductor stacked structure 30 and the other LED chips eachhaving a plurality of light emitting cells may be used together.

FIG. 15 is a schematic plan view illustrating a light emitting deviceaccording to still another embodiment of the present invention. FIG. 16is a sectional view taken along line A-A of FIG. 15.

Referring to FIGS. 15 and 16, the light emitting device 100 according tothis embodiment is almost similar to those described with reference toFIGS. 10 and 11, but different in that lead electrodes 173 a and 173 bpassing through a support substrate 171 are formed in place of theadditional electrodes 43 and 44 pass through the wavelength convertinglayer 50 to be exposed to the outside.

That is, the light emitting device 100 comprises a support substrate171, and bonding patterns 173 c are positioned on the support substrate171. First and second lead electrodes 173 a and 173 b extend from a topsurface of the support substrate 171 to a bottom surface of the supportsubstrate 171. The support substrate 171 is not particularly limited,and may be, for example, a silicon substrate, a ceramic substrate, ametal substrate or a glass substrate. When the support substrate 171 isa conductive substrate such as a metal substrate, an insulating layermay be formed on a surface of the support substrate 171.

As described with reference to FIGS. 10 and 11, the light emittingdevice 100 may also comprise an LED chip B1 for emitting light of afirst wavelength and LED chips R1 to R8 for emitting light of a secondwavelength. Here, it has been illustrated and described that the LEDchips R1 to R8 for emitting the light of the second wavelength have avertical structure. However, the LED chips R1 to R8 may have ahorizontal structure as described above. Although it has beenillustrated and described that the LED chip B1 for emitting the light ofthe first wavelength has a horizontal structure, the LED chip B1 mayhave a vertical structure.

The LED chip B1 for emitting the light of the first wavelength and theLED chips R1 to R8 for emitting the light of the second wavelength areelectrically connected to one another by means of connectors between thefirst and second lead electrodes 173 a and 173 b.

As shown in these figures, when the LED chips R1 to R8 for emitting thelight of the second wavelength have a vertical structure, each of theLED chips R1 to R8 is mounted on the bonding pattern 173 c through aconductive adhesive, and is electrically connected to a neighboringbonding pattern 173 or the LED chip B1 for emitting the light of thefirst wavelength by means of a bonding wire 145. An upper electrode 142may be formed on each of the LED chips R1 to R8 so as to be connected tothe bonding wire 145, and first and second electrodes may be formed onthe LED chip B1. When the LED chips R1 and R8 for emitting the light ofthe second wavelength have a horizontal structure, the chips may beelectrically connected to one another using two bonding wires asdescribed with reference to FIGS. 10 and 11. When the LED chip B1 foremitting the light of the first wavelength has a vertical structure, theLED chip B1 is mounted on a bonding pattern (not shown), and the firstelectrode of the LED chip B1 is electrically connected to a neighboringbonding pattern or any one of the LED chips R1 to R8 by means of abonding wire (not shown). The second electrode of the LED chip B1 iselectrically connected to a neighboring bonding pattern or any one ofLED chips R1 to R8 from the bonding pattern by means of a wire (notshown). However, the present invention is not limited thereto. That is,the LED chip B1 is mounted on the bonding pattern, and may beelectrically connected to any one of the LED chips R1 to R8 by means ofa connector in the inside of the support substrate 171.

In this embodiment, current is introduced into the second lead electrode173 b and then flows to the LED chip B1 via the LED chips R1 and R2.Subsequently, the current sequentially flows from the LED chip R3 to theLED chip R8 and then flows out through the first lead electrode 173 a.

Although it has been illustrated in this embodiment that all the LEDchips B1 and R1 to R8 on the support substrate 171 are connected inseries to one another, the present invention is not limited thereto, andvarious electrical connections are possible.

Meanwhile, the wavelength converting layer 50 covers the LED chips B1and R1 to R8.

According to this embodiment, warm white light can be implemented, forexample, by a combination of the LED chip B1 for emitting blue light,the LED chips R1 to R8 for emitting red light and the wavelengthconverting layer 50. The first and second lead electrodes 173 a and 173b passing through the support substrate 171 are employed, so that it isunnecessary to form any additional electrode passing through thewavelength converting layer 50, unlike the aforementioned embodiments.Thus, the fabricating process of the light emitting device can be moresimplified.

Although it has been described in this embodiment that the LED chip B1for emitting the light of the first wavelength and the LED chips R1 toR8 for emitting the light of the second wavelength are positioned on thesupport substrate 171 in the single wavelength converting layer 50, aplurality of LED chips for emitting light of the same wavelength, e.g.,a plurality of LED chips for emitting blue light, may be positioned onthe support substrate 171.

FIG. 17 is a schematic sectional view illustrating a light emittingdevice 110 according to still another embodiment of the presentinvention.

Referring to FIG. 17, the light emitting device 110 according to thisembodiment is similar to the light emitting device 100 described withreference to FIG. 16, but different in that the LED chips B1 and R1 toR8 are flip-bonded onto the bonding patterns 173 c and the leadelectrodes 173 a and 173 b on the support substrate 171.

That is, the LED chips B1 and R1 to R8 are flip-bonded onto the bondingpatterns 173 c between the first and second lead electrodes 173 a and173 b so as to be electrically connected to one another.

According to this embodiment, the bonding wires 145 can be omitted,thereby simplifying the fabricating process of the light emittingdevice. Further, the heat dissipation efficiency of the light emittingdevice can be improved using flip chips.

FIG. 18 is a schematic sectional view illustrating a light emittingmodule 200 having a light emitting device 100 mounted therein accordingto an embodiment of the present invention.

Referring to FIG. 18, the light emitting module 200 comprises a printedcircuit board 191, the light emitting device 100, a molding portion 197and a dam portion 193. The printed circuit board 191 may be formed ofvarious types of PCBs such as a metal core PCB.

Meanwhile, the light emitting device 100 is identical to that describedwith reference to FIGS. 15 and 16. In the light emitting device 100, aplurality of LED chips B1 and R1 to R8 are mounted on a supportsubstrate 171, and covered with a signal wavelength converting layer 50.

A plurality of light emitting devices 100 may be mounted on the printedcircuit board 191. The light emitting devices 100 may be electricallyconnected to one another by a conductive pattern (not shown) on theprinted circuit board.

Each of the light emitting devices 100 may be encapsulated by themolding portion 197, and the dam portion 193 may be formed to confine aregion for forming the molding portion 197 therein.

Although it has been described in this embodiment that the lightemitting devices 100 are mounted on the printed circuit board, thepresent invention is not limited thereto. That is, the light emittingdevice 110 of FIG. 17 may be mounted on the printed circuit board, orthe various light emitting devices as described above may be mounted onthe printed circuit board 191.

FIG. 19 is a schematic sectional view illustrating a light emittingmodule 210 having the light emitting device 100 mounted thereinaccording to another embodiment of the present invention.

Referring to FIG. 19, the light emitting module 210 according to thisembodiment is similar to the light emitting module 200 described withreference to FIG. 18, but different in that a plurality of lightemitting devices 100 are encapsulated by one molding portion 197.

That is, the plurality of light emitting devices 100 are mounted in aregion surrounded by the dam portion 193, and the molding portion 197 isformed on the light emitting devices 100 so as to surround the lightemitting devices 100.

FIG. 20 is a schematic sectional view illustrating a lighting assemblyhaving the light emitting module 200 mounted therein according to anembodiment of the present invention. Here, a bulb-type lighting assemblywill be described below.

Referring to FIG. 20, the lighting assembly comprises the light emittingmodule 200, a base 201, a heat sink 203 and a cover 205. The lightemitting module 200 has been previously described with reference to FIG.18, and therefore, its detailed description will be omitted.

The base 201 has terminals exposed to the outside so as to be connectedto an external power source. The heat sink 203 is used to dissipate heatto the outside from the light emitting module 200, and may have aplurality of pins. The light emitting module 200 may be positioned on atop of the heat sink 203. The cover 205 covers the light emitting module200 so as to protect the light emitting module 200 from an externalenvironment.

In this embodiment, a bulb-type lighting assembly has been described asan example. However, the present invention is not limited thereto, andmay be applied to various lighting assemblies.

Although it has been described that the light emitting module 200 ismounted in the lighting assembly, the light emitting module 210 asdescribed with reference to FIG. 19 may be mounted in the lightingassembly.

According to this embodiment, the light emitting device having thesingle wavelength converting layer 50 formed on the plurality of LEDchips B1 and R1 to R8 is used, so that the light emitting module can beeasily fabricated, and thus the lighting assembly can be easilyfabricated.

Although the present invention has been described in connection with thepreferred embodiments, the embodiments of the present invention are onlyfor illustrative purposes and should not be construed as limiting thescope of the present invention. It will be understood by those skilledin the art that various changes and modifications can be made theretowithin the technical spirit and scope defined by the appended claims.

What is claimed is:
 1. A light emitting device, comprising:semiconductor stacked structures electrically connected to one anotherby connectors, wherein the semiconductor stacked structures comprise afirst semiconductor stacked structure and a second semiconductor stackedstructure; a wavelength converting layer covering upper surfaces of thesemiconductor stacked structures; first electrodes disposed on thesemiconductor stacked structures, respectively; second electrodesdisposed on the semiconductor stacked structures, respectively; a firstadditional electrode disposed only on the first electrode on the firstsemiconductor stacked structure; a second additional electrode disposedonly on the second electrode on the second semiconductor stackedstructure; and a mount comprising a first lead terminal and a secondlead terminal, electrically connected to the first additional electrodeand the second additional electrode, respectively, wherein each of theconnectors electrically connects two of the semiconductor stackedstructures by connecting the first electrode of one semiconductorstacked structure to the second electrode of another semiconductorstacked structure, and wherein the connectors are disposed under anupper surface of the wavelength converting layer.
 2. The light emittingdevice of claim 1, wherein the wavelength converting layer has an uppersurface area greater than an upper surface area of the semiconductorstacked structures.
 3. The light emitting device of claim 1, whereinparts of the wavelength converting layer are disposed between thesemiconductor stacked structures.
 4. The light emitting device of claim3, wherein the semiconductor stacked structures are spaced apart fromeach other by the wavelength converting layer.
 5. The light emittingdevice of claim 1, further comprising a substrate disposed between thesemiconductor stacked structures and the mount.
 6. The light emittingdevice of claim 5, wherein the substrate comprises an insulationmaterial.
 7. The light emitting device of claim 5, wherein thewavelength converting layer covers a side of the substrate in aconformal thickness.
 8. The light emitting device of claim 1, whereinthe wavelength converting layer covers sides of the semiconductorstacked structures with a substantially uniform thickness.
 9. The lightemitting device of claim 8, wherein the semiconductor stacked structuresare fully buried in the wavelength converting layer.
 10. The lightemitting device of claim 1, wherein the semiconductor stacked structuresare flip chips.
 11. The light emitting device of claim 1, wherein thesemiconductor stacked structures are electrically connected to the firstlead terminal and the second lead terminal by flip-bonding.
 12. Thelight emitting device of claim 1, further comprising a spacer layercontacting the side surfaces of the semiconductor stacked structures.13. The light emitting device of claim 12, wherein the spacer layercomprises an insulating layer or a distributed Bragg reflector (DBR).